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For the Inventor, By the Inventor

Midland, MI, United States of America

Byung Keun Hwang

This inventor holds 10 USPTO granted patents and 7 published patent applications and 5 EPO patents. Top assignees: Dow Corning Corporation, Dow Silicones Corporation, Jiangsu Nata Opto-Electronic Materials Co. Ltd.. Active years: 2003-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung Keun Hwang. Retrieved from https://idiyas.com/inventor/byung-keun-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 51(Granted Patents)


Location History:

  • Midland, MI (US) (2003 - 2023)
  • Wilmington, DE (US) (2023)

Company Filing History:

goldMedal3 out of 2,921 
 
Dow Corning Corporation
 patents
silverMedal3 out of 490 
 
Dow Silicones Corporation
 patents
bronzeMedal3 out of 7 
 
Jiangsu Nata Opto-Electronic Materials Co. Ltd.
 patents
4. 1 out of 11 
 
Ddp Specialty Electronic Materials US 9, LLC
 patents
5. 1 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2003-2023

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10 patents (USPTO):Explore Patents
1. 11691993 - 1,1,1-tris(organoamino)disilane compounds and method of preparing same (2023-07-04),
2. 11598002 - Thio(di)silanes (2023-03-07),
3. 11479858 - Thio(di)silanes (2022-10-25),
4. 11142462 - Trichlorodisilane (2021-10-12),
5. 11040989 - Tris(disilanyl)amine (2021-06-22),
6. 10597495 - Aged polymeric silsesquioxanes (2020-03-24),
7. 10049882 - Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD (2018-08-14),
8. 7189664 - Method for producing hydrogenated silicon-oxycarbide films (2007-03-13),
9. 6667553 - H:SiOC coated substrates (2003-12-23),
10. 6593248 - Method for producing hydrogenated silicon oxycarbide films having low dielectric constant (2003-07-15),

Title: Byung Keun Hwang: Innovator in Silane Compounds

Introduction

Byung Keun Hwang is a notable inventor based in Midland, MI (US). He has made significant contributions to the field of silane compounds, holding a total of 10 patents. His work has advanced the understanding and application of these compounds in various industries.

Latest Patents

Hwang's latest patents include innovative methods for preparing 1,1,1-tris(organoamino)disilane compounds. This patent discloses a method that involves aminating a 1,1,1-trihalodisilane with an organoamine compound. The resulting reaction product is the 1,1,1-tris(organoamino)disilane compound, which can be used in a film-forming composition. Additionally, he has developed a method for forming films on substrates using thio(di)silanes through chemical vapor deposition (CVD) or atomic layer deposition (ALD) processes.

Career Highlights

Throughout his career, Byung Keun Hwang has worked with prominent companies such as Dow Corning Corporation and Dow Silicones Corporation. His experience in these organizations has allowed him to refine his expertise in silane technology and contribute to various innovative projects.

Collaborations

Hwang has collaborated with notable colleagues, including Xiaobing Zhou and Brian David Rekken. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Byung Keun Hwang's contributions to the field of silane compounds and his impressive portfolio of patents highlight his role as a leading inventor. His work continues to influence advancements in material science and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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