The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2018
Filed:
Jan. 25, 2017
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Won Woong Chung, Suwon-si, KR;
Sun hye Hwang, Hwaseong-si, KR;
Youn Joung Cho, Hwaseong-si, KR;
Jung Sik Choi, Seongnam-si, KR;
Xiaobing Zhou, Midland, MI (US);
Brian David Rekken, Midland, MI (US);
Byung Keun Hwang, Midland, MI (US);
Michael David Telgenhoff, Midland, MI (US);
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
DOW SILICONES CORPORATION, Midland, MI (US);
Abstract
A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.