Sun Hye Hwang

Title: Innovations of Sun Hye Hwang in Semiconductor Fabrication

Introduction

Sun Hye Hwang is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative methods have paved the way for advancements in device fabrication.

Latest Patents

Sun Hye Hwang holds a patent for a method of fabricating semiconductor devices. This patent, titled "Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD," describes a process that involves forming a dielectric layer structure on a substrate with a height difference. The method utilizes atomic layer deposition (ALD) to create a first dielectric layer, which includes silicon nitride, on the uneven structure. The process involves feeding specific gases, such as pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC), into a chamber to facilitate the in situ formation of the dielectric layer.

Career Highlights

Throughout his career, Sun Hye Hwang has worked with prominent companies in the semiconductor industry. He has been associated with Samsung Electronics Co., Ltd. and Dow Silicones Corporation. His experience in these organizations has contributed to his expertise in semiconductor fabrication techniques.

Collaborations

Sun Hye Hwang has collaborated with esteemed colleagues, including Won Woong Chung and Youn Joung Cho. These partnerships have fostered innovation and development in the semiconductor field.

Conclusion

Sun Hye Hwang's contributions to semiconductor technology through his innovative patent and collaborations highlight his role as a significant inventor in the industry. His work continues to influence advancements in semiconductor device fabrication.