The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Sep. 21, 2017
Applicant:
Jiangsu Nata Opto-electronic Materials Co. Ltd., Jiangsu, CN;
Inventors:
Byung K Hwang, Midland, MI (US);
Travis Sunderland, Midland, MI (US);
Xiaobing Zhou, Midland, MI (US);
Assignee:
JIANGSU NATA OPTO-ELECTRONIC MATERIALS CO. LTD., Jiangsu Province, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/34 (2006.01); C01B 33/107 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C01B 33/107 (2013.01); C23C 16/345 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); C01B 33/1071 (2013.01);
Abstract
Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.