Dow Corning Corporation

Dow Silicones Corporation

Jiangsu Nata Opto-electronic Materials Co. Ltd.

Samsung Electronics Co., Ltd.

Ddp Specialty Electronic Materials US 9, LLC

Nata Semiconductor Materials Co., Ltd.

Byung Keun Hwang

Xiaobing Zhou

Brian David Rekken

Mark Jon Loboda

Noel Mower Chang

Xianghuai Wang

Vasgen Aram Shamamian

Peng-Fei Fu

Barry M Ketola

Michael David Telgenhoff

Jung Sik Choi

Youn Joung Cho

Travis Sunderland

Won Woong Chung

Glenn Allen Cerny

Sun Hye Hwang

Barry Ketola

Michael D Telgenhoff

Xianghuai William Wang

A 1,1,1-tris(organoamino)disilane compound and a method of preparing the 1,1,1-tris(organoamino)disilane compound are disclosed. The method comprises aminating a 1,1,1-trihalodisilane with an aminating agent comprising an organoamine compound to give a reaction product comprising the 1,1,1-tris(organoamino)disilane compound, thereby preparing the 1,1,1-tris(organoamino)disilane compound. A film-forming composition is also disclosed. The film-forming composition comprises the 1,1,1-tris(organoamino)disilane compound. A film formed with the film-forming composition, and a method of forming the film, are also disclosed. The method of forming the film comprises subjecting the film-forming composition comprising the 1,1,1-tris(organoamino)disilane compound to a deposition condition in the presence of a substrate, thereby forming the film on the substrate.

1,1,1-tris(organoamino)disilane compounds and method of preparing same

A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (RRRCS)(RN)(Si&#x2014;Si)XH(I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R, R, R, R, and X are as described herein.

Thio(di)silanes

Thio(di)silanes comprising a thiosilane of formula (A): (RRRCS)(Si)XH(A) wherein subscript s is from 2 to 4 or a thiodisilane of formula (I): (RRRCS)(RN)(Si&#x2014;Si)XH(I) wherein subscript s is from 1 to 6, and wherein R, R, R, R, X and subscripts n, x and h are defined herein. Also compositions comprising same, methods of making and using same, intermediates useful in synthesis of same, films and materials prepared therefrom.

Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising trichlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

Trichlorodisilane

A method for making tris(disilanyl)amine. The method comprises steps of: (a) contacting a disilanyl(alkyl)amine with ammonia to make bis(disilanyl)amine; and (b) allowing bis(disilanyl)amine to produce tris(disilanyl)amine and ammonia.

Tris(disilanyl)amine

An aged polymeric silsesquioxane comprising a product of heating a cured polymeric silsesquioxane of formula (I) (see specification) at a temperature of from 460&#xb0; to 700&#xb0; C., a formulation comprising the aged polymeric silsesquioxane and at least one additional constituent, methods of making and using the aged polymeric silsesquioxane, and manufactured articles and devices containing the aged polymeric silsesquioxane.

Aged polymeric silsesquioxanes

A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD

A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.

Method for producing hydrogenated silicon-oxycarbide films

This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant and a light transmittance of 95% or more for light with a wavelength in the range of 400 nm to 800 nm. The method comprises reacting a methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. Because of the transmittance the resulting films are useful in the formation of display devices.

H:SiOC coated substrates

A method for producing fluorinated hydrogenated silicon oxycarbide (H:F:SiOC) and amorphous fluorinated hydrogenated silicon carbide (H:F:SiC) films having low dielectric permittivity. The method comprises reacting a silicon containing compound with a fluorocarbon or fluorohydrocarbon compound having an unsaturated carbon bonded to F or H. The resulting films are useful in the formation of semiconductor devices.

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Midland, MI, United States of America

Byung Keun Hwang