The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 07, 2023
Filed:
Oct. 10, 2017
Applicant:
Dow Silicones Corporation, Midland, MI (US);
Inventors:
Noel Mower Chang, Midland, MI (US);
Byung K. Hwang, Midland, MI (US);
Brian David Rekken, Midland, MI (US);
Vasgen Aram Shamamian, Midland, MI (US);
Xianghuai Wang, Midland, MI (US);
Xiaobing Zhou, Midland, MI (US);
Assignee:
DDP SPECIALTY ELECTRONIC MATERIALS US 9, LLC, Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/40 (2006.01); C07F 7/02 (2006.01); C23C 16/56 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C07F 7/025 (2013.01); C23C 16/305 (2013.01); C23C 16/345 (2013.01); C23C 16/401 (2013.01); C23C 16/56 (2013.01);
Abstract
A method of forming a film on a substrate is disclosed. The method comprises: heating a thiodisilane according to formula (I) (RRRCS)(RN)(Si—Si)XH(I) in a chemical vapor deposition (CVD) or atomic layer deposition (ALD) process under thermal or plasma conditions to give a silicon-containing film disposed on the substrate, wherein: subscript s, n, x, h and R, R, R, R, and X are as described herein.