Company Filing History:
13 out of 2,340 
2 out of 6,228 
1 out of 23 Years Active: 1996-2005
Title: Byung Jin Ahn: Innovator in Flash Memory Technology
Introduction
Byung Jin Ahn is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of flash memory technology, holding a total of 16 patents. His work has advanced the capabilities and efficiency of memory storage solutions.
Latest Patents
Among his latest patents is a groundbreaking invention related to a flash memory cell and the method of manufacturing it. This invention also includes programming, erasing, and reading methods for the flash memory cell. The innovation involves the formation of a source region and a drain region, followed by the creation of a tunnel oxide film. This process prevents damage to the tunnel oxide film during ion implantation. Additionally, Byung Jin Ahn's design features independent two channel regions beneath the floating gate, allowing for the storage of two or more bits in a single cell. The integration of the tunnel oxide film, floating gate, and dielectric film with an ONO structure further enhances the electrical characteristics and integration levels of the device.
Career Highlights
Byung Jin Ahn has worked with notable companies in the semiconductor industry, including Hyundai Electronics Industries Co. Ltd. and Hynix Semiconductor Inc. His experience in these organizations has contributed to his expertise in memory technology and innovation.
Collaborations
Throughout his career, Byung Jin Ahn has collaborated with esteemed colleagues such as Hee Hyun Chang and Sheung Hee Park. These partnerships have fostered a collaborative environment that has led to significant advancements in their field.
Conclusion
Byung Jin Ahn's contributions to flash memory technology have established him as a key figure in the industry. His innovative patents and collaborative efforts continue to influence the development of advanced memory solutions.