The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 1999
Filed:
Apr. 01, 1997
Byung Jin Ahn, Seoul, KR;
Myong Seob Kim, Seoul, KR;
Jea Chun Ahn, Seoul, KR;
Jea Hyun Sone, Suwon, KR;
Hyundai Electronics Industries Co., Ltd., Kyungki-Do, KR;
Abstract
A method of programming a flash memory cell which increases programming efficiency and characteristics. A depletion area formed at a source region is extended from a surface portion of a silicon substrate to the bottom portion of the silicon substrate. A minority carrier produced at a trap center existing at the extended depletion area receives energy from a high electric field area formed at the silicon substrate between a select gate and floating gate. The minority carrier is then changed into a hot electron by a voltage applied to a drain region. The electron is injected into a floating gate by a vertical direction electric field formed by a high potential voltage applied to a control gate.