The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 1997
Filed:
Jul. 02, 1996
Byung Jin Ahn, Seoul, KR;
Hyundai Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
The present invention discloses a structure of a transistor in a semiconductor device and a method of manufacturing the same. The present invention manufactures a high voltage transistor by etching a silicon substrate to a depth deeper than that of the field oxide film by a self-aligned wet etching process using the field oxide film as a mask and, thereafter, by forming the first gate electrode which electrically switches ON and OFF between the source region and the drain region by using a gate electrode mask and simultaneously forming a second gate electrode to prevent a junction breakdown below the bird's beak of the field oxide film. Accordingly, the present invention can improve the degree of integration of the device by forming a gate electrode to prevent a junction breakdown below the bird's beak of the field oxide film.