Byung-Gil Choi

This inventor holds 71 USPTO granted patents, primarily in Nonvolatile Memory (CPC class G11C). Top assignee: Samsung Electronics Co., Ltd.. Active years: 2001-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Byung-Gil Choi. Retrieved from https://idiyas.com/inventor/byung-gil-choi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 71

% Patents Active = 80.3

Average Co-Inventor Count = 2.4

ph-index = 12

Forward Citations = 529(Granted Patents)

Forward Citations (Not Self Cited) = 505(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Yongin, KR (2001)
Gyeonggi-do, KR (2006 - 2012)
Yongin-si, KR (2005 - 2013)

Company Filing History:

71 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2001-2013

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Areas of Expertise:

Resistive Memory

Variable Resistance

Phase-Change Memory

Nonvolatile Memory

Memory Cells

Bit-Line Discharging

Temperature Control

Memory Device Fabrication

Data Writing Techniques

Memory Programming

Coupling Noise Suppression

Semiconductor Memory

71 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8369136 - Resistive memory employing different pulse width signals for reading different memory cells (2013-02-05),

2. 8264905 - Nonvolatile memory device using variable resistive element (2012-09-11),

3. 8254159 - Method of discharging bit-lines for a non-volatile semiconductor memory device performing a read-while-write operation (2012-08-28),

4. 8243508 - Resistive memory devices using assymetrical bitline charging and discharging (2012-08-14),

5. 8243495 - Phase-change random access memory capable of reducing word line resistance (2012-08-14),

6. 8228720 - Nonvolatile memory devices including variable resistive elements (2012-07-24),

7. 8213254 - Nonvolatile memory device with temperature controlled column selection signal levels (2012-07-03),

8. 8199603 - Nonvolatile memory devices having variable-resistance memory cells and methods of programming the same (2012-06-12),

9. 8184468 - Nonvolatile memory devices using variable resistive elements (2012-05-22),

10. 8139432 - Variable resistance memory device and system thereof (2012-03-20),

11. 8116129 - Variable resistance memory device and method of manufacturing the same (2012-02-14),

12. 8107284 - Nonvolatile memory device using a variable resistive element (2012-01-31),

13. 8107275 - Nonvolatile memory device using variable resistive element (2012-01-31),

14. 8098518 - Nonvolatile memory device using variable resistive element (2012-01-17),

15. 8085575 - Nonvolatile memory device and method of driving the same (2011-12-27),

Title: Inventor Byung-Gil Choi

Introduction: Byung-Gil Choi is a renowned inventor hailing from Yongin-si, South Korea. He is known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Byung-Gil Choi holds several patents in the areas of electronics, telecommunications, and renewable energy. His most recent patents focus on sustainable energy solutions and smart device technologies.

Career Highlights: With a career spanning over two decades, Byung-Gil Choi has worked with leading tech companies in South Korea, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Byung-Gil Choi has collaborated with top researchers, engineers, and scientists both locally and internationally. His collaborative efforts have resulted in the successful development of cutting-edge technologies.

Conclusion: Byung-Gil Choi's dedication to innovation and his passion for creating impactful solutions have solidified his reputation as a pioneering inventor in South Korea and beyond.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]