The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8107284 B1

PDF
Full Text
Expired
Date of Patent:
Jan. 31, 2012

Filed:

Dec. 03, 2009
Applicant:

Byung-gil Choi, Yongin-si, KR;

Inventor:

Byung-Gil Choi, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device includes a plurality of memory banks, each including a plurality of nonvolatile memory cells, write global bit lines shared by the plurality of memory banks, read global bit lines shared by the plurality of memory banks, and a dummy global bit line arranged between the write global bit lines and the read global bit lines, wherein the dummy global bit line is configured and operable to reduce noise affecting a write bit line involved in a write operation or noise affecting a read global bit line involved in a read operation.


Find Patent Forward Citations

Choi, Byung-Gil. (2012). Nonvolatile memory device using a variable resistive element (U.S. Patent No. 8107284). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8107284

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