The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2012

Filed:

Jul. 07, 2009
Applicants:

Won-ryul Chung, Gyeonggi-do, KR;

Byung-gil Choi, Gyeonggi-do, KR;

In-cheol Shin, Gyeonggi-do, KR;

Ki-won Lim, Gyeonggi-do, KR;

Inventors:

Won-Ryul Chung, Gyeonggi-do, KR;

Byung-Gil Choi, Gyeonggi-do, KR;

In-Cheol Shin, Gyeonggi-do, KR;

Ki-Won Lim, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 8/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Nonvolatile memory devices include an array of variable-resistance memory cells and a write driver electrically coupled to the array. The write driver is configured to drive a bit line in the array of variable-resistance memory cells with a stair-step sequence of at least two unequal bit line voltages during an operation to program a variable-resistance memory cell in said array. This stair-step sequence of at least two unequal bit line voltages includes a precharge voltage (e.g., Vcc-Vth) at a first step and a higher boosted voltage (e.g., Vpp-Vth) at a second step that follows the first step.


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