Suwon-si, South Korea

Byeonggyu Hwang

USPTO Granted Patents = 3 

Average Co-Inventor Count = 9.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2018-2021

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3 patents (USPTO):Explore Patents

Title: Byeonggyu Hwang: Innovator in Silica Layer Technology

Introduction

Byeonggyu Hwang is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of materials science, particularly in the development of silica layers for electronic devices. With a total of 3 patents to his name, Hwang continues to push the boundaries of innovation in his field.

Latest Patents

Hwang's latest patents include a composition for forming a silica layer, which incorporates perhydropolysilazane (PHPS) and a solvent. This composition is designed to achieve specific ratios in the NMR spectrum, ensuring optimal performance in electronic applications. Another patent focuses on a silicon-containing polymer composition that demonstrates a SiO conversion rate, which is crucial for the effectiveness of silica layers in electronic devices.

Career Highlights

Hwang is currently employed at Samsung SDI Co., Inc., where he applies his expertise in materials science to develop advanced technologies. His work has been instrumental in enhancing the performance and reliability of electronic devices through innovative silica layer compositions.

Collaborations

Hwang collaborates with talented colleagues such as Kunbae Noh and Taeksoo Kwak, contributing to a dynamic research environment that fosters innovation and creativity.

Conclusion

Byeonggyu Hwang's contributions to silica layer technology exemplify the spirit of innovation in the electronics industry. His patents and ongoing work at Samsung SDI Co., Inc. highlight his commitment to advancing materials science for future applications.

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