Samsung Sdi Co., Inc.

Byeonggyu Hwang

Jin-Hee Bae

Kunbae Noh

Taeksoo Kwak

Jinwoo Seo

Junyoung Jang

Jun Sakong

Seungwoo Jang

Yoong Hee Na

Huichan Yun

Haneul Kim

Jingyo Kim

Woo Han Kim

Chungheon Lee

Wanhee Lim

Hyeonsu Jo

Euihyun Kim

Eunseon Lee

Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in anH-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl, when a peak derived from NSiHand NSiHis referred to as Peak 1 and a peak derived from NSiHis referred to as Peak 2, a ratio (P/(P+P)) of an area (P) of Peak 1 relative to a total area (P+P) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (P/P) of an area (P) of Region A relative to an area (P) of Region B is greater than or equal to about 1.5.

Composition for forming silica layer, silica layer and electronic device incorporating silica layer

A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiOconversion rate of greater than about 0 and less than or equal to about 15. The SiOconversion rate is represented by: SiOconversion rate=(a ratio of an area of Si&#x2014;O to an area of Si&#x2014;H measured after coating the composition in a thickness of 6700 &#x212b; on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85&#xb0; C. and a relative humidity of 85%)&#x2212;(a ratio of an area of Si&#x2014;O to an area of Si&#x2014;H measured after coating the composition in a thickness of 6700 &#x212b; on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85&#xb0; C. and a relative humidity of 85%).

Composition for forming silica layer, silica layer, and electronic device

A composition for forming a silica layer includes a silicon-containing polymer and a mixed solvent including at least two solvents, wherein the mixed solvent has a surface tension of about 5 mN/m to about 35 mN/m at a temperature of about 25&#xb0; C.

Composition for forming silica layer, method for manufacturing silica layer and silica layer

Growing community of inventors

Suwon-si, South Korea

Byeonggyu Hwang