Company Filing History:
Years Active: 1985-1993
Title: Bumman Kim: Innovator in Semiconductor Technology
Introduction
Bumman Kim is a prominent inventor based in Richardson, TX (US), known for his significant contributions to semiconductor technology. With a total of 9 patents to his name, Kim has made remarkable advancements in the field of heterostructure field effect transistors.
Latest Patents
One of Kim's latest patents is a method of forming a heterostructure field effect transistor. This invention features a buffer layer made of a first compound semiconductor material, with a second semiconductor material layer formed over it. The second layer has a total thickness of less than 250 angstroms. A doped third semiconductor layer is positioned over the second layer, where the net dopant concentration in the second layer exceeds that in the third layer. A gate layer is situated above the third layer, and in a preferred embodiment, the second layer is a pulse-doped pseudomorphic material. Additionally, the patent outlines a method for creating the heterostructure field effect transistor, which includes forming a doped pseudomorphic semiconductor layer of a first conductivity type between two other semiconductor layers.
Career Highlights
Bumman Kim is currently employed at Texas Instruments Corporation, where he continues to innovate and develop cutting-edge technologies in the semiconductor industry. His work has significantly impacted the efficiency and performance of electronic devices.
Collaborations
Kim has collaborated with notable colleagues, including Hua Q Tserng and Hung-Dah Shih, contributing to various projects that enhance semiconductor technology.
Conclusion
Bumman Kim's innovative work in semiconductor technology, particularly in the development of heterostructure field effect transistors, showcases his expertise and dedication to advancing the field. His contributions continue to influence the industry and pave the way for future innovations.