The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 1987
Filed:
Sep. 28, 1984
Applicant:
Inventors:
Bumman Kim, Richardson, TX (US);
Hua Q Tserng, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 22 ; 357 232 ; 357 15 ; 357 16 ;
Abstract
A metal-insulator-semiconductor field effect transistor using an undoped AlGaAs layer as an insulator over an n-type GaAs channel. The high breakdown field of the wide-bandgap AlGaAs results in a very high gate breakdown voltage and a low prebreakdown gate leakage current. The presence of the gate insulator also reduces the gate capacitance, Cgs. Moreover, the electron density in the channel is not all concentrated next to the heterojunction, which means that the series resistance of the channel is low, and also means that channel mobility will not be degraded by a less-than-perfect interface at the heterojunction.