The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 1985
Filed:
Aug. 31, 1983
Applicant:
Inventors:
Burhan Bayraktaroglu, Plano, TX (US);
Bumman Kim, Richardson, TX (US);
William Frensley, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03F / ; H03C / ;
U.S. Cl.
CPC ...
330287 ; 333 34 ;
Abstract
A two-port monolithic microwave amplifier, which uses a distributed negative resistance diode with gain (such as an IMPATT diode) as an active element. The diode is tapered (increasing in width but not in thickness) so that, as the RF signal propagates along the diode, it sees a wider and wider active diode region. This diode is operated in the power-saturated region, so that, as the RF signal propagates along the diode, terminal voltage remains essentially constant, but the RF current increases. This configuration is inherently undirectional.