The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 1991
Filed:
Jan. 06, 1987
Bumman Kim, Richardson, TX (US);
Hua Q Tserng, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Preferred embodiments include a microwave power MISFET (30) with a thin GaAS channel (54) bounded by an undoped Al.sub.x Ga.sub.1-x As gate insulator (44) and a doped Al.sub.y Ga.sub.1-y As barrier (40). Under forward bias the channel (54) forms a quantum well which accumulates electrons and thereby increase maximum current and power handling without degrading breakdown voltage of the heterostructure MISFET An additional active layer (36) can be included on the other side of the barrier (40) to further increase power handling. Other embodiments include use of a strained layer In.sub.z Ga.sub.1-z As channel.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile