Company Filing History:
Years Active: 2003-2004
Title: The Innovations of Boson Lin
Introduction
Boson Lin is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in memory cell design. With a total of 3 patents to his name, Lin's work has advanced the capabilities of flash memory devices.
Latest Patents
One of Lin's latest patents is titled "Spacer like floating gate formation." This patent describes a split-gate flash memory cell that features a spacer-like floating gate. The method involves defining a floating area opening in a structure layer over a substrate and forming polysilicon spacers along the vertical walls of the opening. This innovative approach allows for the creation of a flash memory device with two independent cells, each equipped with its own spacer floating gates and control gates, while sharing a single source. This design enables a significant reduction in size compared to conventional methods.
Another notable patent is for a "Twin-bit memory cell having shared word lines and shared bit-line contacts for electrically erasable and programmable read-only memory (EEPROM)." This patent outlines a novel twin-bit cell structure that includes adjacent floating gates with a common control gate and bit-line contact. The design optimizes the cell area and enhances the alignment of the control gate over the floating gates, resulting in improved manufacturing efficiency.
Career Highlights
Boson Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at TSMC has positioned him as a key player in the development of advanced memory technologies.
Collaborations
Lin has collaborated with notable colleagues, including Ching-Wen Cho and David Ho. These partnerships have contributed to the innovative advancements in semiconductor design and manufacturing processes.
Conclusion
Boson Lin's contributions to the field of semiconductor technology, particularly in memory cell design, have been significant. His innovative patents reflect a commitment to advancing the capabilities of flash memory devices. Lin's work continues to influence the industry and pave the way for future developments.