The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2003
Filed:
Jun. 14, 2001
Boson Lin, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Abstract
Within a split gate field effect transistor (FET) device and a method for fabricating the split gate field effect transistor (FET) device there is employed at least one of: (1) an annular shaped floating gate electrode formed with a spacer shaped cross-section having a tip at its upper outer periphery; and (2) a pair of source/drain regions formed into a semiconductor substrate adjacent a pair of opposite sides of the annular shaped floating gate electrode, where one of the pair of source/drain regions is formed further beneath the annular shaped floating gate electrode than the other of the pair of source/drain regions. The split gate field effect transistor (FET) device is formed with enhanced properties, such as decreased dimensions and enhanced coupling.