Wuhan, China

Boru Xie

This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Boru Xie. Retrieved from https://idiyas.com/inventor/boru-xie

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Boru Xie: Innovator in Semiconductor Technology

Introduction

Boru Xie is a prominent inventor based in Wuhan, China, known for his contributions to semiconductor technology. His innovative work has led to the development of advanced semiconductor devices that enhance performance and yield in manufacturing processes.

Latest Patents

Boru Xie holds a patent for "Semiconductor devices including a plurality of fins with corresponding gate oxide layers, fabrication methods thereof, 3D memories and memory devices." This patent describes a semiconductor device that includes a substrate with first and second fins, each having corresponding gate oxide layers. The design aims to reduce the difficulty of the etching process while improving the yield and performance of the products.

Career Highlights

Boru Xie is currently employed at Yangtze Memory Technologies, Ltd., where he continues to push the boundaries of semiconductor innovation. His work focuses on developing cutting-edge technologies that are essential for the advancement of memory devices.

Collaborations

Boru collaborates with talented coworkers such as Quan Zhang and Lan Yao, contributing to a dynamic team that drives innovation in the semiconductor field.

Conclusion

Boru Xie's contributions to semiconductor technology exemplify the impact of innovative thinking in the industry. His patent and ongoing work at Yangtze Memory Technologies, Ltd. highlight his commitment to advancing technology and improving product performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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