The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 20, 2026
Filed:
Jun. 30, 2023
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Abstract
A semiconductor device fabrication method includes providing a processing wafer including a plurality of semiconductor mesas at least partially surrounded by a dielectric layer, performing a first etching to remove a first portion of the dielectric layer in a first region to form a first recess and a second portion of the dielectric layer in a second region to form a second recess, and performing a second etching to deepen the first recess. A first mesa of the plurality of semiconductor mesas is in the first region, and a second mesa of the plurality of semiconductor mesas is in the second region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile