Semiconductor devices including a plurality of fins with corresponding gate oxide layers, fabrication methods thereof, 3d memories and memory devices

Abstract

Examples of the present application provide a semiconductor device, a fabrication method thereof, a 3D memory and a memory device, wherein the semiconductor device includes: a substrate including first fins and second fins; a first gate oxide layer disposed on the first fins; a second gate oxide layer disposed on the second fins, wherein the sum of the thicknesses of the first fin and the first gate oxide layer is less than or equal to the sum of the thicknesses of the second fin and the second gate oxide layer; and a gate layer disposed on the first gate oxide layer and the second gate oxide layer. In the way described above, difficulty of etching process is reduced and yield and performance of products are improved.