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For the Inventor, By the Inventor

Daejeon, South Korea

Bong-Jun Kim

USPTO Granted Patents = 12 


Average Co-Inventor Count = 5.8

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Daegeon, KR (2011)
  • Daejeon, KR (2010 - 2014)

Company Filing History:

goldMedal12 out of 11,277 
 
Electronics and Telecommunications Research Institute
 patents

Years Active: 2010-2014

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12 patents (USPTO):Explore Patents
1. 8890574 - Circuit for preventing self-heating of metal-insulator-transition (MIT) device and method of fabricating integrated-device for the same circuit (2014-11-18),
2. 8563903 - Method and circuit for controlling radiant heat of transistor using metal-insulator transition device (2013-10-22),
3. 8536554 - Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same (2013-09-17),
4. 8330135 - Germanium based metal-insulator transition thin film, metal-insulator transition device including the metal-insulator transition thin film, and method of fabricating the metal-insulator transition device (2012-12-11),
5. 8305221 - Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor (2012-11-06),
6. 8207750 - Circuit for continuously measuring discontinuous metal insulator transition of MIT element and MIT sensor using the same (2012-06-26),
7. 8031022 - Oscillation circuit including MIT device and method of adjusting oscillation frequency of the oscillation circuit (2011-10-04),
8. 8017268 - Lithium secondary battery including discharge unit (2011-09-13),
9. 7989792 - Abrupt metal-insulator transition device with parallel MIT material layers (2011-08-02),
10. 7944360 - Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensor (2011-05-17),
11. 7911756 - Low-voltage noise preventing circuit using abrupt metal-insulator transition device (2011-03-22),
12. 7791924 - Memory device using abrupt metal-insulator transition and method of operating the same (2010-09-07),
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