The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jun. 20, 2008
Sung-youl Choi, Ulsan, KR;
Bong-jun Kim, Daejeon, KR;
Yong-wook Lee, Daejeon, KR;
Jae-yeob Shim, Daejeon, KR;
Hyun-tak Kim, Daejeon, KR;
Sung-Youl Choi, Ulsan, KR;
Bong-Jun Kim, Daejeon, KR;
Yong-Wook Lee, Daejeon, KR;
Jae-Yeob Shim, Daejeon, KR;
Hyun-Tak Kim, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a germanium (Ge) based metal-insulator transition (MIT) thin film which is formed of a Ge single-element material instead of a compound material of two or more elements and by which material growth may be easily performed and a problem of a second phase characteristic in accordance with a structural defect and an included impurity may be solved, an MIT device including the MIT thin film, and a method of fabricating the MIT device. The MIT device includes a substrate; a germanium (Ge) based MIT thin film which is formed of a Ge single-element material on the substrate and in which a discontinuous MIT occurs at a predetermined transition voltage; and at least two thin film electrodes contacting the Ge based MIT thin film, wherein the discontinuous MIT occurs in the Ge based MIT thin film due to a voltage or a current which is applied through the thin film electrodes.