The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2011
Filed:
Jan. 31, 2007
Hyun-tak Kim, Daejeon, KR;
Byung-gyu Chae, Daejeon, KR;
Kwang-yong Kang, Daejeon, KR;
Bong-jun Kim, Daejeon, KR;
Yong-wook Lee, Daejeon, KR;
Sun-jin Yun, Daejeon, KR;
Hyun-Tak Kim, Daejeon, KR;
Byung-Gyu Chae, Daejeon, KR;
Kwang-Yong Kang, Daejeon, KR;
Bong-Jun Kim, Daejeon, KR;
Yong-Wook Lee, Daejeon, KR;
Sun-Jin Yun, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.