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For the Inventor, By the Inventor

Daejeon, South Korea

Sun-Jin Yun

USPTO Granted Patents = 16 


Average Co-Inventor Count = 4.7

ph-index = 5

Forward Citations = 559(Granted Patents)


Company Filing History:

goldMedal16 out of 11,277 
 
Electronics and Telecommunications Research Institute
 patents

Years Active: 1996-2014

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16 patents (USPTO):Explore Patents
1. 8890574 - Circuit for preventing self-heating of metal-insulator-transition (MIT) device and method of fabricating integrated-device for the same circuit (2014-11-18),
2. 8563903 - Method and circuit for controlling radiant heat of transistor using metal-insulator transition device (2013-10-22),
3. 8536554 - Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same (2013-09-17),
4. 8305221 - Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor (2012-11-06),
5. 8207750 - Circuit for continuously measuring discontinuous metal insulator transition of MIT element and MIT sensor using the same (2012-06-26),
6. 8174188 - Electro-luminescent device including metal-insulator transition layer (2012-05-08),
7. 8031022 - Oscillation circuit including MIT device and method of adjusting oscillation frequency of the oscillation circuit (2011-10-04),
8. 8031021 - Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit (2011-10-04),
9. 8017268 - Lithium secondary battery including discharge unit (2011-09-13),
10. 7989792 - Abrupt metal-insulator transition device with parallel MIT material layers (2011-08-02),
11. 7944360 - Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensor (2011-05-17),
12. 7911756 - Low-voltage noise preventing circuit using abrupt metal-insulator transition device (2011-03-22),
13. 7791924 - Memory device using abrupt metal-insulator transition and method of operating the same (2010-09-07),
14. 7791376 - Logic circuit using metal-insulator transition (MIT) device (2010-09-07),
15. 6723642 - Method for forming nitrogen-containing oxide thin film using plasma enhanced atomic layer deposition (2004-04-20),
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