The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Jun. 29, 2006
Hyun-tak Kim, Daejeon, KR;
Bong-jun Kim, Daejeon, KR;
Kwang-yong Kang, Daejeon, KR;
Sun-jin Yun, Daejeon, KR;
Yong-wook Lee, Seoul, KR;
Byung-gyu Chae, Daejeon, KR;
Hyun-Tak Kim, Daejeon, KR;
Bong-Jun Kim, Daejeon, KR;
Kwang-Yong Kang, Daejeon, KR;
Sun-Jin Yun, Daejeon, KR;
Yong-Wook Lee, Seoul, KR;
Byung-Gyu Chae, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.