This inventor holds 6 USPTO granted patents and 2 published patent applications. Top assignees: Peking University, Beijing Institute of Space Long March Vehicle. Active years: 2024-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:

Years Active: 2024-2026
Title: Bo Shen: Innovator in Gallium and Aluminum Nitride Technologies
Introduction
Bo Shen is a prominent inventor based in Beijing, China. He has made significant contributions to the field of materials science, particularly in the development of gallium nitride (GaN) and aluminum nitride (AlN) technologies. With a total of 6 patents to his name, Shen's work has implications for various high-tech applications.
Latest Patents
One of Shen's latest patents is a method for preparing a gallium nitride (GaN) single-crystal substrate using edge metal mask technology. This innovative method involves preparing a metal mask ring on a composite epitaxial substrate and epitaxially growing a GaN single-crystal sacrificial layer. The process includes performing separation with interlayer decoupling of single-crystal graphene through an in-situ temperature gradient method. This results in a self-supporting GaN single-crystal sacrificial layer, which is then used to create a stress-free GaN single-crystal substrate. The method enhances the crystalline quality of the GaN substrate while efficiently catalyzing the decomposition reaction of the nitrogen source.
Another notable patent by Shen is the preparation method of an aluminum nitride composite structure based on a two-dimensional (2D) crystal transition layer. This method involves transferring the 2D crystal transition layer onto a first periodic groove of an epitaxial substrate and forming a second periodic groove staggered with the first. The process is designed for large-scale industrial production and meets the material requirements for deep ultraviolet light-emitting diodes (DUV-LEDs) and radio frequency (RF) electronic devices.
Career Highlights
Bo Shen has worked at prestigious institutions such as Peking University and the Beijing Institute of Space Long March Vehicle. His experience in these organizations has allowed him to collaborate on cutting-edge research and development projects.
Collaborations
Shen has collaborated with notable colleagues, including Yucheng Guo and Xinqiang Wang. Their joint efforts have contributed to advancements in the field of materials science and technology.
Conclusion
Bo Shen is a distinguished inventor whose work in gallium and aluminum nitride technologies has paved the way for future innovations. His patents reflect a commitment to enhancing material properties for various applications, making him a key figure in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile