Method for monolithic integration preparation of full-color nitride semiconductor micro light-emitting diode array

Abstract

Disclosed is a method for monolithic integration preparation of a full-color nitride semiconductor micro light-emitting diode (micro-LED) array. The method includes preparing a composite conductive substrate; overlaying an insulating template onto the composite conductive substrate to prepare a template substrate; overlaying monocrystalline graphene onto the template substrate in a completely aligned manner to obtain a customized template graphene substrate including graphene array units, wherein one blue-region graphene array element, one green-region graphene array element, and two red-region graphene array elements in each graphene array unit have surface properties different from each other; then performing an in-situ process to epitaxially grow a vertical-structure all-nitride material, to obtain a full-color micro-LED array epitaxial wafer by one-step in-situ process; finally, performing packaging and preparing a transparent electrode, to obtain a vertical-structure full-color nitride micro-LED array with top light emission.