Beijing, China

Zhaoying Chen

This inventor holds 4 USPTO granted patents. Top assignee: Peking University. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhaoying Chen. Retrieved from https://idiyas.com/inventor/zhaoying-chen-kjof3oz3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 75.0

Average Co-Inventor Count = 6.6

ph-index = 1


Company Filing History:


Years Active: 2024-2026

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4 patents (USPTO):Explore Patents

Title: Innovations of Zhaoying Chen in Semiconductor Technology

Introduction

Zhaoying Chen is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced materials and methods for light-emitting diodes. With a total of 4 patents to his name, Chen's work is paving the way for future innovations in this critical area.

Latest Patents

One of Chen's latest patents is a preparation method of an aluminum nitride composite structure based on a two-dimensional (2D) crystal transition layer. This method involves transferring the 2D crystal transition layer onto a first periodic groove of an epitaxial substrate. It also includes forming a second periodic groove staggered with the first, depositing a supporting protective layer, and removing the 2D crystal transition layer through thermal oxidation. This innovative approach has low difficulty and is suitable for large-scale industrial production, making it highly applicable for deep ultraviolet light-emitting diodes (DUV-LEDs) and radio frequency (RF) electronic devices.

Another notable patent is the method for monolithic integration preparation of a full-color nitride semiconductor micro light-emitting diode array. This method includes preparing a composite conductive substrate and overlaying an insulating template onto it. It also involves overlaying monocrystalline graphene in a completely aligned manner to create a customized template graphene substrate. The process culminates in the packaging and preparation of a transparent electrode, resulting in a vertical-structure full-color nitride micro-LED array with top light emission.

Career Highlights

Zhaoying Chen is affiliated with Peking University, where he continues to engage in groundbreaking research and development. His work has garnered attention for its potential applications in various electronic devices, enhancing the efficiency and performance of light-emitting technologies.

Collaborations

Chen collaborates with notable colleagues such as Fang Liu and Yucheng Guo, contributing to a dynamic research environment that fosters innovation and creativity.

Conclusion

Zhaoying Chen's contributions to semiconductor technology through his innovative patents are shaping the future of light-emitting devices. His work exemplifies the intersection of research and practical application, making significant strides in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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