The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Aug. 17, 2023
Peking University, Beijing, CN;
Xinqiang Wang, Beijing, CN;
Zhaoying Chen, Beijing, CN;
Fang Liu, Beijing, CN;
Bowen Sheng, Beijing, CN;
Duo Li, Beijing, CN;
PEKING UNIVERSITY, Beijing, CN;
Abstract
A vertical photo-assisted metal organic chemical vapor deposition (MOCVD) apparatus and a deposition method using the same are provided. In the vertical photo-assisted MOCVD apparatus, a light field vertically acts on the layered reactant gas flows, and interaction paths between the light field and the reactant gas flows are short, which reduces the required light source power, lowers the design complexity of the photo-assisted MOCVD apparatus, improves the safety of the photo-assisted MOCVD apparatus and the utilization efficiency of the light field power. In the vertical photo-assisted MOCVD apparatus, through self-rotation and revolution of the growth substrates with the substrate susceptor, active reactants generated by the light field are uniformly distributed between the growth substrates and within each growth substrate in the growth chamber, thereby achieving high uniformity large-size photo-assisted MOCVD epitaxial growth.