The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Nov. 09, 2023
Peking University, Beijing, CN;
Jin Wei, Beijing, CN;
Yanlin Wu, Beijing, CN;
Junjie Yang, Beijing, CN;
Maojun Wang, Beijing, CN;
Bo Shen, Beijing, CN;
PEKING UNIVERSITY, Beijing, CN;
Abstract
Disclosed are a GaN power device and a manufacturing method thereof. The GaN power device includes a substrate, and a buffer layer, a GaN channel layer and a barrier layer sequentially stacked on the substrate from bottom to top. The barrier layer is provided with a p-GaN cap layer and a p-GaN thin layer, and the p-GaN thin layer is configured to cover the surface of the barrier layer and is connected to the p-GaN cap layer; the upper surface of the barrier layer is also provided with an input electrode and an output electrode, and a control electrode is provided on the upper surface of the p-GaN cap layer. The control electrode and the p-GaN thin layer are located between the input electrode and the output electrode.