Company Filing History:
Years Active: 2021-2025
Title: The Innovations of Bing-Yang Jiang
Introduction
Bing-Yang Jiang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on the development of advanced semiconductor devices and fabrication methods.
Latest Patents
One of his latest patents is titled "Semiconductor device and method for fabricating the same." This invention describes a semiconductor device that includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Notably, a part of the second spacer comprises an I-shape, and the cap layer features a planar top surface and an inclined sidewall. The cap layer directly contacts the second and third spacers, and it includes a vertical sidewall connected to the inclined sidewall.
Career Highlights
Bing-Yang Jiang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to further his research and development efforts in semiconductor technology.
Collaborations
Throughout his career, Bing-Yang Jiang has collaborated with notable colleagues such as Wei-Chih Chuang and Chia-Jong Liu. These collaborations have contributed to the advancement of semiconductor innovations.
Conclusion
Bing-Yang Jiang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to impact the industry and drive innovation forward.