The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Dec. 01, 2022
United Microelectronics Corp., Hsin-Chu, TW;
Wei-Chih Chuang, Tainan, TW;
Chia-Jong Liu, Ping-Tung County, TW;
Kuang-Hsiu Chen, Tainan, TW;
Chung-Ting Huang, Kaohsiung, TW;
Chi-Hsuan Tang, Kaohsiung, TW;
Kai-Hsiang Wang, Taichung, TW;
Bing-Yang Jiang, Tainan, TW;
Yu-Lin Cheng, Changhua County, TW;
Chun-Jen Chen, Tainan, TW;
Yu-Shu Lin, Tainan, TW;
Jhong-Yi Huang, Nantou County, TW;
Chao-Nan Chen, Tainan, TW;
Guan-Ying Wu, Kaohsiung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a gate structure on a substrate, a first spacer on a sidewall of the gate structure, a second spacer on a sidewall of the first spacer, a third spacer on a sidewall of the second spacer, and first and second stacks of an epitaxial layer and a cap layer respectively disposed at first and second sides of the gate structure. Preferably, a part of the second spacer comprises an I-shape, the cap layer includes a planar top surface and an inclined sidewall, the cap layer contacts the second spacer and the third spacer directly, and the cap layer includes a vertical sidewall connected to the inclined sidewall.