City, China

Bin Yuan

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., TSMC China Company Limited. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bin Yuan. Retrieved from https://idiyas.com/inventor/bin-yuan-ujypb9h5

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Bin Yuan and Semiconductor Manufacturing Innovation.

Introduction

Bin Yuan is an inventor based in City, China, whose patent work concerns semiconductor fabrication processes. His disclosed invention addresses communication and pressure control across pump systems used with separate semiconductor-processing chambers.

Latest Patents

The supplied information lists one patent for Bin Yuan: “System and Method for Semiconductor Fabricating Process.” The method uses a first pump apparatus to control pressure in a first chamber and a second pump apparatus to control pressure in a second chamber. Because the pumps produce operational data in different digital protocol formats, a box device receives and decodes both data streams. It then checks whether the first pump’s operational data falls within an acceptable range and adjusts the pump to bring the data within that range.

Career Highlights

The provided career information associates Yuan with Taiwan Semiconductor Manufacturing Company Limited and TSMC China Company Limited. His patent reflects work on integrating equipment data and pressure-control functions in semiconductor fabrication.

Collaborations

Yuan’s listed coworkers include Lei Xu and Yukai Hou. The supplied information does not specify their roles in the patent or their particular contributions.

Conclusion

Bin Yuan’s listed patent focuses on decoding data from pumps that use different digital protocols and maintaining an acceptable operating range for semiconductor fabrication.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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