Cupertino, CA, United States of America

Bhimachar Venkatesh

This inventor holds 13 USPTO granted patents. Top assignees: Advanced Micro Devices Corporation, Spansion LLC.. Active years: 1986-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bhimachar Venkatesh. Retrieved from https://idiyas.com/inventor/bhimachar-venkatesh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.7

ph-index = 9

Forward Citations = 212(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (1986 - 1988)
  • Cupertino, CA (US) (2000 - 2009)

Company Filing History:


Years Active: 1986-2009

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13 patents (USPTO):Explore Patents

Title: Innovations by Bhimachar Venkatesh

Introduction

Bhimachar Venkatesh is a notable inventor based in Cupertino, California. He has made significant contributions to the field of electronics, particularly in the development of sense amplifiers and current sensing architectures. With a total of 13 patents to his name, Venkatesh's work has had a profound impact on memory technology and current sensing applications.

Latest Patents

One of his latest patents is focused on sense amplifiers with high voltage swing. This invention includes a reference voltage generator that produces a reference output voltage and a core output voltage generator that creates a core output voltage. The design incorporates a core front-end stage and a core back-end stage, or a series of amplifier transistors that conduct a portion of core current through a current conducting device, such as a core cell. The specific sizes and connections of the transistors lead to a high voltage swing, enhancing the sensitivity of the sense amplifier.

Another significant patent by Venkatesh pertains to current sensing architecture for high bitline voltage, rail-to-rail output swing, and Vcc noise cancellation. This circuit arrangement allows for the reading of current flowing through a memory cell when voltages are applied. The current is influenced by the charge stored within the cell, which represents the information stored. This technology is not limited to memory applications but can be utilized in any scenario requiring current sensing with a regulated supply voltage.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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