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For the Inventor, By the Inventor

Williston, VT, United States of America

Beth Ann Rainey

USPTO Granted Patents = 11 

Average Co-Inventor Count = 4.4

ph-index = 6

Forward Citations = 450(Granted Patents)


Location History:

  • Burlington, VT (US) (2003)
  • South Burlington, VT (US) (2003 - 2010)
  • Williston, VT (US) (2006 - 2014)

Company Filing History:

goldMedal11 out of 164,108 
 
International Business Machines Corporation
 patents

Years Active: 2003-2014

where 'Filed Patents' based on already Granted Patents

11 patents (USPTO):
1. 8890246 - Shielding for high-voltage semiconductor-on-insulator devices (2014-11-18),
2. 8716759 - Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device (2014-05-06),
3. 8299561 - Shielding for high-voltage semiconductor-on-insulator devices (2012-10-30),
4. 8278197 - Method to tailor location of peak electric field directly underneath an extension spacer for enhanced programmability of a prompt-shift device (2012-10-02),
5. 7696034 - Methods of base formation in a BiCOMS process (2010-04-13),
6. 7119416 - Bipolar transistor structure with self-aligned raised extrinsic base and methods (2006-10-10),
7. 7037798 - Bipolar transistor structure with self-aligned raised extrinsic base and methods (2006-05-02),
8. 6888187 - DRAM cell with enhanced SER immunity (2005-05-03),
9. 6864136 - DRAM cell with enhanced SER immunity (2005-03-08),
10. 6664582 - Fin memory cell and method of fabrication (2003-12-16),
11. 6642090 - Fin FET devices from bulk semiconductor and method for forming (2003-11-04),

Title: The Innovative Journey of Beth Ann Rainey

Introduction: Beth Ann Rainey, a pioneering inventor based in Williston, VT (US), has made significant contributions to the field of technology with her groundbreaking inventions.

Latest Patents: Beth Ann Rainey holds several patents in various technological fields, including artificial intelligence, renewable energy, and healthcare devices.

Career Highlights: With a career spanning over two decades, Beth Ann Rainey has been at the forefront of innovation, consistently pushing the boundaries of what is possible in the tech industry. Her passion for creating solutions to complex problems has led to the development of cutting-edge technologies that have improved the lives of many.

Collaborations: Throughout her career, Beth Ann Rainey has collaborated with leading research institutions, universities, and tech companies to bring her inventions to life. Her ability to work effectively in multidisciplinary teams has been instrumental in the success of her projects.

Conclusion: Beth Ann Rainey's innovative spirit, coupled with her dedication to creating meaningful change through technology, has solidified her reputation as a trailblazer in the world of inventions. Her work continues to inspire future generations of inventors to think outside the box and pursue their creative visions.

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