The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Mar. 26, 2012
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Roger W. Cheek, Somers, NY (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Chung H. Lam, Peekskill, NY (US);
Beth A. Rainey, Williston, VT (US);
Michael J. Zierak, Colchester, VT (US);
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Roger W. Cheek, Somers, NY (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Chung H. Lam, Peekskill, NY (US);
Beth A. Rainey, Williston, VT (US);
Michael J. Zierak, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A prompt-shift device having reduced programming time in the sub-millisecond range is provided. The prompt-shift device includes an altered extension region located within said semiconductor substrate and on at least one side of the patterned gate region, and an altered halo region located within the semiconductor substrate and on at least one side of the patterned gate region. The altered extension region has an extension ion dopant concentration of less than about 1E20 atoms/cm, and the altered extension region has a halo ion dopant concentration of greater than about 5E18 atoms/cm. The altered halo region is in direct contact with the altered extension region.