The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
May. 30, 2008
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Roger W. Cheek, Somers, NY (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Chung H. Lam, Peekskill, NY (US);
Beth A. Rainey, Williston, VT (US);
Michael J. Zierak, Colchester, VT (US);
Matthew J. Breitwisch, Yorktown Heights, NY (US);
Roger W. Cheek, Somers, NY (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Chung H. Lam, Peekskill, NY (US);
Beth A. Rainey, Williston, VT (US);
Michael J. Zierak, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention provides a method to enhance the programmability of a prompt-shift device, which reduces the programming time to sub-millisecond times, by altering the extension and halo implants, instead of simply omitting the same from one side of the device as is the case in the prior art prompt-shift devices. The invention includes an embodiment in which no additional masks are employed, or one additional mask is employed. The altered extension implant is performed at a reduced ion dose as compared to a conventional extension implant process, while the altered halo implant is performed at a higher ion dose than a conventional halo implant. The altered halo/extension implant shifts the peak of the electrical field to under an extension dielectric spacer.