The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Apr. 12, 2002
David M. Fried, Ithaca, NY (US);
Edward J. Nowak, Essex Junction, VT (US);
Beth Ann Rainey, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention provides a memory cell and method for forming the same that results in improved cell density without overly increasing fabrication cost and complexity. The preferred embodiment of the present invention provides a fin design to form the memory cell. Specifically, a fin Field Effect Transistor (FET) is formed to provide the access transistor, and a fin capacitor is formed to provide the storage capacitor. By forming the memory cell with a fin FET and fin capacitor, the memory cell density can be greatly increased over traditional planar capacitor designs. Additionally, the memory cell can be formed with significantly less process cost and complexity than traditional deep trench capacitor designs.