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For the Inventor, By the Inventor

Cothorne, United Kingdom

Bernard F Harrison

USPTO Granted Patents = 15 

Average Co-Inventor Count = 4.7

ph-index = 10

Forward Citations = 272(Granted Patents)


Location History:

  • Crawley, GB (1988)
  • Cothorne, GB (1993 - 1999)
  • Copthorne, GB (1988 - 2006)
  • West Sussex, GB (2003 - 2007)

Company Filing History:

goldMedal15 out of 13,713 
 
Applied Materials, Inc.
 patents

Years Active: 1988-2007

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15 patents (USPTO):Explore Patents
1. 7282427 - Method of implanting a substrate and an ion implanter for performing the method (2007-10-16),
2. 7253424 - Method of implanting a substrate and an ion implanter for performing the method (2007-08-07),
3. 7235797 - Method of implanting a substrate and an ion implanter for performing the method (2007-06-26),
4. 7049210 - Method of implanting a substrate and an ion implanter for performing the method (2006-05-23),
5. 6956223 - Multi-directional scanning of movable member and ion beam monitoring arrangement therefor (2005-10-18),
6. 6908836 - Method of implanting a substrate and an ion implanter for performing the method (2005-06-21),
7. 6608316 - Ion implantation beam monitor (2003-08-19),
8. 6559454 - Ion beam generation apparatus (2003-05-06),
9. 5886355 - Ion implantation apparatus having increased source lifetime (1999-03-23),
10. 5747936 - Ion implantation apparatus with improved post mass selection deceleration (1998-05-05),
11. 5554852 - Ion implantation having increased source lifetime (1996-09-10),
12. 5517077 - Ion implantation having increased source lifetime (1996-05-14),
13. 5262652 - Ion implantation apparatus having increased source lifetime (1993-11-16),
14. 4754200 - Systems and methods for ion source control in ion implanters (1988-06-28),
15. 4743767 - Systems and methods for ion implantation (1988-05-10),

Title: The Innovative Journey of Bernard F Harrison

Introduction: Bernard F Harrison, a prolific inventor hailing from Cothorne, GB, has left a significant mark in the world of patents with an impressive tally of 15 patents to his name. His groundbreaking contributions have revolutionized the field of ion implantation, notably in the realm of substrate implantation methods.

Latest Patents: Among his most recent patents is a method of implanting a substrate and an ion implanter for performing the procedure. This innovative approach involves two-dimensional scanning of a substrate relative to an implant beam, creating a raster of scan lines on the substrate. By measuring beam current at turnaround points and adjusting the fast scan speed accordingly, Harrison's method ensures precise dose uniformity, enhancing the efficiency and effectiveness of the implantation process.

Career Highlights: Bernard F Harrison is associated with the esteemed company Applied Materials, Inc., a key player in the realm of semiconductor manufacturing equipment. His tenure at Applied Materials has been marked by a string of innovative patents that have pushed the boundaries of ion implantation technology, cementing his reputation as a trailblazing inventor in the industry.

Collaborations: Throughout his career, Harrison has collaborated with esteemed colleagues such as Peter T Kindersley and Adrian John Murrell. Together, they have pooled their expertise to drive forward groundbreaking innovations in the field of ion implantation, setting new standards for precision and performance.

Conclusion: Bernard F Harrison's remarkable journey as an inventor underscores his commitment to advancing technological frontiers and enhancing the efficacy of ion implantation techniques. With a rich tapestry of patents and a legacy of collaboration with industry stalwarts, Harrison continues to be a driving force in the world of innovations, shaping the future of semiconductor manufacturing with his visionary contributions.

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