Grenoble, France

Benjamin Scarfogliere

This inventor holds 2 USPTO granted patents and 1 EPO patent. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, S.o.i.tec Silicon on Insulator Technologies, Soitec. Active years: 2007-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Benjamin Scarfogliere. Retrieved from https://idiyas.com/inventor/benjamin-scarfogliere

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

 

Average Co-Inventor Count = 5.8

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2007-2012

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2 patents (USPTO):Explore Patents

Title: Benjamin Scarfogliere: Innovator in Semiconductor Technology

Introduction

Benjamin Scarfogliere is a notable inventor based in Grenoble, France. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on improving the efficiency and effectiveness of semiconductor bonding processes.

Latest Patents

Scarfogliere's latest patents include a method for controlled temperature implantation. This innovation aims to reduce and render uniform the surface roughness and variations in thickness of a layer after detachment of a donor substrate. The mean temperature of the donor substrate during implantation is controlled to be in the range of 20°C to 150°C, with a maximum temperature variation of less than 30°C. Another significant patent is a method for bonding semiconductor structures together. This technique involves providing a bonding surface on each of two semiconductor structures, brushing a bonding surface to remove contaminants, and enhancing hydrophilicity to facilitate molecular bonding of the structures.

Career Highlights

Throughout his career, Benjamin Scarfogliere has worked with prominent companies in the semiconductor industry. He has been associated with S.O.I.TEC Silicon on Insulator Technologies and the Commissariat à l'Énergie Atomique et aux Énergies Alternatives. His experience in these organizations has contributed to his expertise in semiconductor technologies.

Collaborations

Scarfogliere has collaborated with notable professionals in his field, including Christophe Maleville and Corinne Maunand Tussot. These collaborations have further enriched his work and innovations in semiconductor technology.

Conclusion

Benjamin Scarfogliere is a distinguished inventor whose contributions to semiconductor technology have made a significant impact. His innovative patents and career achievements reflect his dedication to advancing the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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