Soitec

S.o.i.tec Silicon on Insulator Technologies

Commissariat À L'energie Atomique (Cea)

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Benjamin Scarfogliere

Hubert Moriceau

Christophe Maleville

Olivier Rayssac

Sébastien Kerdiles

Nadia Ben Mohamed

Christophe Morales

Corinne Maunand Tussot

Sébastien Cattet

Guillaume Cattet-Guerrini, Legal Representative

Lise Guerrini, Legal Representative

Tussot Corinne Maunand

In order to reduce and render uniform the surface roughness and variations in thickness of a layer after detachment (post-fracture) of a donor substrate, the mean temperature of the donor substrate during implantation thereof is controlled so as to be in the range 20&#xb0; C. to 150&#xb0; C. with a maximum temperature variation of less than 30&#xb0; C.

Controlled temperature implantation

A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.

Method for bonding semiconductor structures together

Growing community of inventors

Grenoble, France

Benjamin Scarfogliere