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For the Inventor, By the Inventor

Hong Kong, China

Beiping Yan

This inventor holds 7 USPTO granted patents. Top assignee: Hong Kong Applied Science and Technology Research Institute. Active years: 2013-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Beiping Yan. Retrieved from https://idiyas.com/inventor/beiping-yan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7

% Patents Active = 85.7

Average Co-Inventor Count = 3.5

ph-index = 4

Forward Citations = 24(Granted Patents)


Company Filing History:

goldMedal7 out of 611 
 
Hong Kong Applied Science and Technology Research Institute
 patents

Years Active: 2013-2017

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7 patents (USPTO):Explore Patents
1. 9640523 - Lateral-diode, vertical-SCR hybrid structure for high-level ESD protection (2017-05-02),
2. 9356442 - Area-efficient clamp for power ring ESD protection using a transmission gate (2016-05-31),
3. 9305916 - ESD power clamp for silicon-on-insulator (SOI) and FinFET processes lacking parasitic ESD diode (2016-04-05),
4. 9054521 - Electro-static-discharge (ESD) protection structure with stacked implant junction transistor and parallel resistor and diode paths to lower trigger voltage and raise holding volatge (2015-06-09),
5. 9021002 - Phase-to-amplitude converter for direct digital synthesizer (DDS) with reduced AND and reconstructed ADD logic arrays (2015-04-28),
6. 8643520 - Digital-to-analog converter (DAC) current cell with shadow differential transistors for output impedance compensation (2014-02-04),
7. 8369054 - NMOS-based feedback power-clamp for on-chip ESD protection (2013-02-05),

Title: Beiping Yan: Innovator in ESD Protection Technologies

Introduction

Beiping Yan is a prominent inventor based in Hong Kong, CN. He has made significant contributions to the field of electrostatic discharge (ESD) protection technologies. With a total of 7 patents to his name, Yan has established himself as a key figure in innovation.

Latest Patents

Yan's latest patents include a "Lateral-diode, vertical-SCR hybrid structure for high-level ESD protection." This invention features a lateral p-n diode surrounded by a vertical Silicon-Controlled Rectifier (SCR), forming an effective ESD protection structure. The design incorporates a cross-shaped P+ diode tap with N+ diode regions, enhancing its functionality. Another notable patent is the "Area-efficient clamp for power ring ESD protection using a transmission gate." This invention utilizes a charge-latching power-to-ground clamp circuit, which efficiently manages ESD protection through innovative use of filter capacitors and resistors.

Career Highlights

Beiping Yan is currently associated with the Hong Kong Applied Science and Technology Research Institute Company, Limited. His work focuses on developing advanced technologies that address critical challenges in electronic device protection.

Collaborations

Yan collaborates with talented individuals such as Xiaowu Cai and Xiao Huo, contributing to a dynamic research environment that fosters innovation.

Conclusion

Beiping Yan's contributions to ESD protection technologies highlight his role as a leading inventor in the field. His innovative patents and collaborative efforts continue to advance the industry and enhance electronic device reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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