Meridian, ID, United States of America

Barbara L Casey

USPTO Granted Patents = 6 

Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 28(Granted Patents)


Company Filing History:


Years Active: 2000-2025

Loading Chart...
6 patents (USPTO):

Title: Barbara L Casey: Innovator in 3D NAND Technology

Introduction

Barbara L Casey is a prominent inventor based in Meridian, Idaho, known for her significant contributions to the field of semiconductor technology. With a total of five patents to her name, she has made remarkable advancements in the design and functionality of 3D NAND storage devices.

Latest Patents

One of her latest patents is for a 3D NAND with an integral drain-end select gate (SGD). This innovative storage device comprises multiple layers of doped semiconductor material interleaved with dielectric material. Each pillar in the 3D NAND structure contains several memory cells and a drain-end select gate. The design features a hollow channel where various film layers are deposited, allowing for tailored film layers near the SGD while preserving those near the memory cells. This arrangement enhances the deposition of a continuous channel film layer, improving the overall efficiency of the memory device.

Another notable patent involves memory arrays and methods for forming them. This invention includes a vertical stack of alternating insulative and wordline levels, with charge-trapping material strategically placed along the control gate regions. The design ensures that the charge-trapping material is spaced from the control gate regions by charge-blocking material, optimizing the performance of NAND memory arrays.

Career Highlights

Barbara has worked with leading companies in the semiconductor industry, including Micron Technology Incorporated and Applied Materials, Inc. Her experience in these organizations has significantly influenced her innovative work in memory technology.

Collaborations

Throughout her career, Barbara has collaborated with notable colleagues such as David A Daycock and Christopher J Larsen. These partnerships have contributed to her success and the advancement of her inventions.

Conclusion

Barbara L Casey stands out as a key figure in the development of 3D NAND technology, with her patents reflecting her expertise and innovative spirit. Her contributions continue to shape the future of semiconductor storage solutions.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…