Barbara A Rossi

Title: Barbara A. Rossi: Innovator in Semiconductor Technology

Introduction

Barbara A. Rossi is a distinguished inventor based in Putnam Valley, NY (US). She has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. Her innovative work has paved the way for advancements in the manufacturing and performance of semiconductor devices.

Latest Patents

One of her latest patents is the "Rapid plasma hydrogenation process for polysilicon MOSFETs." This method involves a two-step hydrogenation process for semiconductor devices, where the first step is conducted at a higher temperature than the out-diffusion temperature. This ensures that a substantial amount of hydrogen does not diffuse out of the device during the second cooling step while maintaining the hydrogenation plasma. Another notable patent is the "Method of etching thin indium tin oxide films." In this process, a thin layer of indium tin oxide is deposited on a substrate and etched using ion reactive etching with a plasma consisting of disassociated argon.

Career Highlights

Barbara A. Rossi has had a remarkable career, working with North American Philips Corporation, where she has been able to apply her expertise in semiconductor technology. Her innovative approaches have contributed to the development of advanced semiconductor devices, enhancing their efficiency and performance.

Collaborations

Throughout her career, Barbara has collaborated with notable colleagues, including Udayanath Mitra and Babar Ali Khan. These collaborations have fostered a creative environment that has led to significant advancements in their respective fields.

Conclusion

Barbara A. Rossi is a prominent figure in the semiconductor industry, known for her innovative patents and contributions to technology. Her work continues to influence the development of semiconductor devices, showcasing her dedication to advancing the field.