North American Philips Corporation

Barbara A Rossi

Babar Ali Khan

Emil Arnold

Helmut Baumgart

Udayanath Mitra

Uday Mitra

A method for rapid plasma hydrogenation of semiconductor devices is provided in which the hydrogenation is conducted in two steps, the first step being conducted at a hydrogenation temperature that is higher than the out-diffusion temperature at which a substantial amount of hydrogen diffuses out of said semiconductor device; and in the second step, the semiconductor device is cooled to a temperature at which out-diffusion is substantially avoided while the hydrogenation plasma is maintained.

Rapid plasma hydrogenation process for polysilicon MOSFETs

A thin layer of indium tin oxide is deposited on a substrate and etched by ion reactive etching with a plasma consisting of disassociated argon.

Method of etching thin indium tin oxide films

A monocrystalline layer of silicon is formed on an insulating substrate according to the present invention by use of a semi-insulating layer between the insulator and silicon film. This semi-insulating layer is composed of a mixture of silicon crystallites embedded in a silicon dioxide glass, for example. Such a technique results in a structure which is substantially free of cracking resulting from differences in thermal expansion coefficients between the insulating substrate and the monocrystalline silicon layer.

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Putnam Valley, NY, United States of America

Barbara A Rossi