The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1993
Filed:
Feb. 21, 1992
Applicant:
Inventors:
Babar Khan, Ossining, NY (US);
Barbara A Rossi, Putnam Valley, NY (US);
Uday Mitra, San Jose, CA (US);
Assignee:
North American Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 24 ; 437937 ; 437247 ; 148D / ;
Abstract
A method for rapid plasma hydrogenation of semiconductor devices is provided in which the hydrogenation is conducted in two steps, the first step being conducted at a hydrogenation temperature that is higher than the out-diffusion temperature at which a substantial amount of hydrogen diffuses out of said semiconductor device; and in the second step, the semiconductor device is cooled to a temperature at which out-diffusion is substantially avoided while the hydrogenation plasma is maintained.