The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 1985
Filed:
Feb. 21, 1984
Applicant:
Inventors:
Emil Arnold, Chappaqua, NY (US);
Helmut Baumgart, Mahopac, NY (US);
Barbara A Rossi, Mahopac, NY (US);
Assignee:
North American Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156613 ; 156D / ; 156D / ; 156D / ;
Abstract
A monocrystalline layer of silicon is formed on an insulating substrate according to the present invention by use of a semi-insulating layer between the insulator and silicon film. This semi-insulating layer is composed of a mixture of silicon crystallites embedded in a silicon dioxide glass, for example. Such a technique results in a structure which is substantially free of cracking resulting from differences in thermal expansion coefficients between the insulating substrate and the monocrystalline silicon layer.